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Anodic processes on a galena (PbS) electrode in the presence of n-butyl xanthate studied FTIR-spectroelectrochemically

Article Abstract:

Anodic reactions on galena (PbS) electrode in solutions of n-butyl xanthate (X) are studied in situ using attenuated total reflection/FTIR spectroscopy within the -0.5 to +0.7 V potential range in deaerated borate buffer (pH 9.2). The conclusion states that in situ ATR/FTIR spectra, dixanthogen is formed on a galena electrode in deaerated buffer at the potentials which are very close to the reversible potentials for the X (super -)/(X )(sub 2) pair.

All Other Basic Organic Chemical Manufacturing, Industrial Organic Chemicals, Xanthates, Usage, Fourier transform infrared spectroscopy

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Spatial separation of photochemical oxidation and reduction reactions on the surface of ferroelectric BaTiO3

Article Abstract:

Photochemical reaction products are deposited on the surface in patterns that correspond to the underlying ferroelectric domain structure when BaTiO3 is illuminated by ultraviolet light in aqueous solutions dissolved Pb(super 2+) or Ag(super +) cations. The separation of charge carriers in the ferroelectric domains creates patterns of oxidized and reduced products on the surface of BaTiO3 that correspond to the domain structure.

Primary nonferrous metals, not elsewhere classified, Primary Smelting and Refining of Nonferrous Metal (except Copper and Aluminum), Barium, Titanium dioxide

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Anodic oxidation of galena (PbS) studied FTIR-spectroelectrochemically

Article Abstract:

Galena (natural PbS) is a semiconductor with a band gap of about 0 .4 eV, mainly of n-type conductivity. The yield increases with increasing buffer concentration and degree of galena reduction before the anodic oxidation, which can be explained by increasing the potential drop in the Helmholtz layer.

Electrical conductivity

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