Free and self-trapped charge-transfer excitons in crystals of dipolar molecules of N,N-dimethylaminobenzylidene 1,3-indandione
Article Abstract:
Research was conducted to examine the excitonic transitions in organic molecular solids built up by dipolar molecules by various absorption and luminescence spectroscopy approaches. Films and crystals of dipolar molecules of N,N-dimethylaminobenzylidene 1,3-indandione (DMABI), which are typical examples of polar molecular compounds, were studied. For DMABI crystal, the exciton band parameters and the exciton-phonon coupling constant are estimated while the potential energy diagram of exciton self-trapping process is suggested.
Publication Name: Journal of Physical Chemistry B
Subject: Chemicals, plastics and rubber industries
ISSN: 1520-6106
Year: 1998
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Electrochemical preparation of platinum nanocrystallites with size selectivity on basal plane oriented graphite surfaces
Article Abstract:
Research was conducted to examine the electrochemical preparation of platinum nanocrystallites with size selectivity on basal plane oriented graphite surfaces. It was observed from electron diffraction measurements that the platinum particles derived using the pulsed potentiostatic method are not epitaxially aligned with the graphite surface and are air stable for days. Both electrochemical studies and TEM imaging data demonstrate that both (111) and (100) facets are present on the surfaces of the platinum nanocrystals.
Publication Name: Journal of Physical Chemistry B
Subject: Chemicals, plastics and rubber industries
ISSN: 1520-6106
Year: 1998
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Free carrier generation in semiconductors induced by absorption of sub-band gap light. A photoelectrochemical study with nanoporous GaP
Article Abstract:
The primary mechanisms of electron-hole generation in a semiconductor caused by the adsorption of a sub-band gap photon have been studied. Electron-hole generation involves optical and thermal transitions between delocalized valence or conduction band states and localized band gap states. Free carrier generation may result in sub-band gap photocurrent flow in insulators and in n- and p-type semiconductors if there is a retrieval layer in which electrons and holes are effectively separated.
Publication Name: Journal of Physical Chemistry B
Subject: Chemicals, plastics and rubber industries
ISSN: 1520-6106
Year: 1998
User Contributions:
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