Photoeffects on the reduction of carbon tetrachloride by zero-valent iron
Article Abstract:
The semiconducting properties of the oxide layer on granular iron as well as the effect of the electronic properties of this oxide on electron transfer to aqueous CCl4 were investigated. Specifically, the role played by conduction-band electrons in the reduction of CCl4 was examined by using light to increase the number of conduction-band electrons at the oxide surface. Experimental results showed that photogenerated conduction-band electrons cause the degradation of CCl4 and shifting of product distribution to more completely dechlorinated products that are indicative of two-electron transfer with a dichlorocarbene intermediate.
Publication Name: Journal of Physical Chemistry B
Subject: Chemicals, plastics and rubber industries
ISSN: 1520-6106
Year: 1998
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Ultrafast studies of photoexcited electron dynamics in gamma- and alpha-Fe2O3 semiconductor nanoparticles
Article Abstract:
A study examined for the first time the photoexcited charge carriers in the nanoparticles of two forms of iron oxides, gamma-Fe2O3 and alpha-Fe2O3. Findings revealed that the photoexcited electrons are characterized by short lives and mainly nonradiative decay. Based on a power-dependency analysis, the relaxation mechanism for the early time decay is quite distinct from that observed in other semiconductor nanoparticles. The results have implications in the application of iron oxide nanoparticles in photocatalysis and magnetooptical devices.
Publication Name: Journal of Physical Chemistry B
Subject: Chemicals, plastics and rubber industries
ISSN: 1520-6106
Year: 1998
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Electron localization in polysilane radical ions
Article Abstract:
Molecular dynamics and extended Huckel molecular orbital calculations were used to study the mechanism for the localization of the excess electron and positive hole in radical ions of the linear oligosilane Si(sub n)H(sub 2n + 2), where n = 32 and 64. Results showed that the excess electron and positive hole were delocalized along the Si chain in the 0.0 ps conformation. However, both electron and hole were completely localized in some Si atoms in the disordered conformations.
Publication Name: Journal of Physical Chemistry B
Subject: Chemicals, plastics and rubber industries
ISSN: 1520-6106
Year: 1999
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