Surface recombination kinetics at the GaAs/electrolyte interface via photoluminescence efficiency measurements

Article Abstract:

A study was conducted to analyze surface recombination kinetics at the gallium arsenide/electrolyte interface using photoluminescence efficiency measurements. Ohmic contact to the backside of the gallium arsenide was carried out by etching the back surface and applying InGa eutectic. Results indicated that surface trap state saturation was dependent on the average excitation power when the pulse repetition frequency surpassed the inverse of the minority carrier trap state residence time.

Surfaces (Materials), Electrolytes, Surfaces (Technology)

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Photoluminescence and transient spectroscopy of free base porphyrin aggregates

Article Abstract:

Research was conducted to examine the photoluminescence and transient spectroscopy of free base porphyrin aggregates. Four different types of aggregates whose absorption spectra were characterized by invariant Soret bands with bandwidths that were independent of the preparative approach were studied. Results demonstrate that the aggregates differ in their time-resolved absorption and fluorescence decay properties which may be attributed to differences in aggregate structures.

Spectra, Porphyrins

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Low-temperature chlorination of GaAs(100)

Article Abstract:

Research was conducted to examine the low-temperature chlorination of GaAs(100). Soft X-ray photoelectron spectroscopy, which employs syhnchrotron radiation, was used to investigate the chemisorption and the reaction of chlorine and hydrogen chloride on the GaAs surface at 110 K. Results provide an insight into the reaction mechanism of the synchrotron radiation-induced etching of the GaAs surface by Cl2 at low temperatures.

Synchrotron radiation, Chlorination, Crystals at low temperatures, Low temperature crystals

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