Atomic layer epitaxy of III-V compounds: chemistry and applications
Article Abstract:
Research was conducted on the atomic layer epitaxy (ALE) of compound semiconductors of groups III and V. The research focused on ALE by group III chloride source gases and group V hydrides. The chemistry and growth kinetics of metal-organic and chloride ALE were analyzed. The properties of ALE other than gallium arsenide such as ALE of gallium phosphite, indium phosphite and indium arsenide were also observed. The self-limiting growth mechanism of chloride ALE of gallium arsenide was elucidated. Results showed the existence of a gallium-terminated surface following the gallium chloride supply. ALE was found to have advantages in the growth of short-period superlattices and sidewall epitaxy. Future applications for ALE such as multiple-wafer growth with thickness uniformity and selective area growth were also discussed.
Publication Name: Proceedings of the IEEE
Subject: Electronics
ISSN: 0018-9219
Year: 1992
User Contributions:
Comment about this article or add new information about this topic:
Recent advances in metal-organic vapor phase epitaxy
Article Abstract:
Metal-organic vapor phase epitaxy (MOVPE) technology has rapidly evolved into one of the better techniques for thin layer structure epitaxial growth. MOVPE can grow a wide range of materials while overcoming growth constraints inherent in other techniques such as vapor phase epitaxy. Research on MOVPE applications recently focused on devices dominated by minority carrier properties. Advances in reactor geometry, growth chemistry and growth condition properties are also fueling extended research on enhanced MOVPE applications, particularly in manufacturing operations. However, MOVPE application in electronic device structures has been slow due to lack of understanding on impurity incorporation and chemical-reactor related factors governing the growth process.
Publication Name: Proceedings of the IEEE
Subject: Electronics
ISSN: 0018-9219
Year: 1992
User Contributions:
Comment about this article or add new information about this topic:
The chemistry of the organometallic vapor-phase epitaxy of mercury cadmium telluride
Article Abstract:
A chemical analysis was conducted on the organometallic vapor-phase epitaxy (OMVPE) of mercury cadmium telluride focusing on applications for compound semiconductors. Data were obtained on the chemical properties connected to film growth, morphology, heteroepitaxy, doping and reactor design. Results showed that in OMVPE of II-VI compounds, intrinsic reaction kinetics regulated film growth. Consequently, resulting material quality is hypersensitive to substrate temperature and reactant distribution in the gas above the substrate. Results also showed cadmium telluride growth preference for the (111)Te orientation, a preference that may be attributed to geometric constraints caused by valence bonds of cadmium and tellurium during crystal incorporation.
Publication Name: Proceedings of the IEEE
Subject: Electronics
ISSN: 0018-9219
Year: 1992
User Contributions:
Comment about this article or add new information about this topic:
- Abstracts: Memory systems for highly parallel computers. Limits of nano-gate fabrication
- Abstracts: 30 years of adaptive neural networks: Perceptron, Madeline, and backpropagation. CMAC: an associative neural network alternative to backpropagation
- Abstracts: Propagation considerations for emerging satellite communications applications. Ray-mode analysis of complex resonances of an open cavity
- Abstracts: ESD: a pervasive reliability concern for IC technologies. IC failure analysis: techniques and tools for quality and reliability improvement
- Abstracts: Computational geometry and computer graphics. Relative neighborhood graphs and their relatives