Ballistic electron transport in semiconductor heterostructures and its analogies in electromagnetic propagation in general dielectrics
Article Abstract:
A set of analogies between electromagnetic propagation in general dielectrics and electron wave propagation in semiconductors are examined. Electromagnetic propagation refers to arbitrary permitivity and permeability, while electron wave propagation refers to arbitrary kinetic energy and effective mass. Separate amplitude and phase refractive indexes are required for both cases: the phase refractive index is required for describing phase effects, while the amplitude refractive index is required for describing amplitude effects. The reflection and refraction of an EMW incident on an interface between two general dielectrics is analyzed by considering the phase amplitude and matching conditions of the electromagnetic boundary conditions.
Publication Name: Proceedings of the IEEE
Subject: Electronics
ISSN: 0018-9219
Year: 1991
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Higher order s-to-z mapping functions and their application in digitizing continuous-time filters
Article Abstract:
A class of higher-order mapping functions that are easy to handle and are based on the Adams-Moulton formulas for numerical integration are discussed. The rules require more care because the discrete-time filter will be unstable if the T sampling time interval is too large, but it is easy to ensure that the discrete-time filter is stable. To do so, the value of T needs to be found for which all of the poles of the continuous-time filter fit inside the selected rule's stability region; the task is made very easy with the use of nondimensionalized curves. The use of higher-order rules will not increase signal path delay, but could result in an increase in the signal frequencies that can be recovered.
Publication Name: Proceedings of the IEEE
Subject: Electronics
ISSN: 0018-9219
Year: 1991
User Contributions:
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Ballistic electron transport in semiconductor heterostructures and its analogies in electromagnetic propagation in general dielectrics
Article Abstract:
The time is approaching when semiconductor device dimensions will no longer remain large with respect to the electron coherence length, or the average distance an electron moves between collisions. Today, device dimensions and coherence length are about the same size, but as device dimensions get even smaller, they will fall under the rules of ballistic transport. The ways in which the devices operate under those rules, and ways in which ballistic transport can be exploited in a positive manner, are discussed.
Publication Name: Proceedings of the IEEE
Subject: Electronics
ISSN: 0018-9219
Year: 1991
User Contributions:
Comment about this article or add new information about this topic:
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