Center for Advanced Electronic Materials Processing
Article Abstract:
The Center for Advanced Electronic Materials Processing program is working on technologies for low thermal budget, in situ, single-wafer advanced electronic materials processing. The latest integrated circuits require reduced lateral dimensions and thinner material layers; they use more vertical dimension, heterojunctions, mixed material technologies, and quantum-based device structures. This requires precise control of thin layers processed on wafers and either lower temperature processing or a lower overall thermal budget. Use of plasma-enhanced chemical vapor deposition (PECVD) and photon-assisted chemical vapor deposition techniques for the formation of thin films at low temperatures offers great promise. Also being developed at the center are rapid thermal processing (RTP) techniques, which allow wafers to be subjected to elevated temperatures for short periods of time. The development of multistep, in situ single-wafer processing is described.
Publication Name: Proceedings of the IEEE
Subject: Electronics
ISSN: 0018-9219
Year: 1993
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ULSI reliability through ultraclean processing
Article Abstract:
Development of high-performance deep subhalf-micron ultralarge-scale integration (ULSI) devices focuses on more functions per unit area of the device and better speed performance without compromising reliability. Ultraclean technology is responsible for the establishment of a total low-temperature processing for semiconductor device fabrication. The attainment of high-performance processes for advanced subhalf-micron and subquarter-micron ULSI devices requires the fulfillment of the three principles of ultraclean technology namely ultraclean processing environment, ultraclean wafer surface and perfect-process parameter control. Binary-multiple-valued-analog merged logic based on a pure complementary metal oxide semiconductor configuration is required for better function performance of a single integrated circuit chip.
Publication Name: Proceedings of the IEEE
Subject: Electronics
ISSN: 0018-9219
Year: 1993
User Contributions:
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