Lateral resonant tunneling transistors employing field-induced quantum wells and barriers
Article Abstract:
The scaled transistors of the future may be smaller than 100 nm and capable of operating at low enough temperatures for quantum effects to be significant. These effects are undesirable for conventional transistors, but future devices may be able to utilize them effectively. Preliminary experiments with the quantum-effect modulation-doped field-effect transistors (MODFET's) are described with a variety of nanometer gate geometries. These gate geometries were conducive to the formation of various quantum wells and barriers in the channel of the MODFET's through-the-field-effect imposed by novel gate structures. The electrons' transport was affected by resonant tunneling. A combination of molecular beam epitaxy and electron beam lithography was used to fabricate the devices. The devices showed resonant tunneling effects at 4.2 K; resonant tunneling is more pronounced for a system of quantum wells confined in three dimensions than in two. The feature size of the gate geometries should be under 50 nm for these quantum effects to be appreciable at practical temperatures.
Publication Name: Proceedings of the IEEE
Subject: Electronics
ISSN: 0018-9219
Year: 1991
User Contributions:
Comment about this article or add new information about this topic:
Pulse response characteristics of GaAs MESFET distributed amplifiers
Article Abstract:
The pulse response characteristics of broad-band gallium arsenide (GaAs) MESFET distributed amplifiers are examined using five Honeywell 300-micrometer GaAs FET stages. The amplifiers are measured and their data analyzed to show close agreement with measured sinusoidal gain at small-signal levels. Expected gain compression is shown to occur for large-signal input. Pulse distortion is shown to be negligible even for pulse heights comparable to FET pinchoff.
Publication Name: Proceedings of the IEEE
Subject: Electronics
ISSN: 0018-9219
Year: 1987
User Contributions:
Comment about this article or add new information about this topic:
Parallel Operation of Power Transistors in Switching Amplifiers
Article Abstract:
Low power dissipation is the result of adding base resistors to parallel transistors in switching-mode power amplifiers to equalize collector currents. Experimental results confirm the operation of the circuit. Circuit diagrams are given along with equalized collector current waveforms.
Publication Name: Proceedings of the IEEE
Subject: Electronics
ISSN: 0018-9219
Year: 1983
User Contributions:
Comment about this article or add new information about this topic:
- Abstracts: An efficient multiplexing technique for packet-switched voice-data networks. On the convergence speed of nonlinear least-squares IIR adaptive filter
- Abstracts: Ballistic electron transport in semiconductor heterostructures and its analogies in electromagnetic propagation in general dielectrics
- Abstracts: Advanced generating technologies: motivation and selection process in electric utilities. An assessment of ocean thermal energy conversion as an advanced electric generation methodology
- Abstracts: Message-Handling Systems and Protocols. Services, architectures, and protocols for space data systems
- Abstracts: Message-Handling Systems and Protocols. Testing OSI Protocols at the National Bureau of Standards