Nanostructure fabrication
Article Abstract:
The availability of new technology for making nanostructures has enabled important physics research, such as the exploration of quantum transport effects in semiconductors using a two-dimensional electron gas confined by lateral nanostructures. High-resolution, high-voltage electron beam lithography is the most important fabrication method. A dedicated nanofabrication system is described. Pattern transfer by ionized cluster beam deposition forms continuous gold lines 25-nm wide. Arbitrary patterns with sizes under 10 nm cannot currently be fabricated in organic resists. Making nanostructures requires the combination of electron beam lithography with either reactive ion etching or metal lift-off. The most flexible nanofabrication technique could use focused ion beams for lithography in resist, implementation, sputtering and disordering in semiconductors. The ideal fabrication tool could be a combination of a focused ion beam and a high-resolution electron beam in the same column.
Publication Name: Proceedings of the IEEE
Subject: Electronics
ISSN: 0018-9219
Year: 1991
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Quantum phenomena in field-effect-controlled semiconductor nanostructures
Article Abstract:
The quantum effects of sub-100 nm features in planar, field-effect-controlled semiconductor structures or 'devices' are discussed. The results are compared with calculations. The devices are based on the GaAs/AlGaAs modulation-doped field-effect transistor (MODFET). They include grating-gate lateral surface superlattices (LSSL), multiple parallel quantum wires (MPQW), planar-resonant-tunneling field-effect transistors (PRESTFET) and arrays of quantum dots (QD). Planar structures offer the opportunity for electron confinement in one, two and three dimensions. They also offer flexibility in electrical 'tuning' of quantum effects, in contrast to conventional, epitaxially grown 'vertical' quantum structures.
Publication Name: Proceedings of the IEEE
Subject: Electronics
ISSN: 0018-9219
Year: 1991
User Contributions:
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