Direct synthesis of gallium nitride nanowires coated with boron carbonitride layers

Article Abstract:

Boron carbonitride (BCN) layers coated on gallium nitride (GaN) nanowires are reported. The mixture of Ga, ball-milled Ga2O3 and B2O3 powder and multiwalled CNTs react under NH3 atmosphere. The structural and optical properties of the coated Gan nanowires are also investigated using scanning electron microscopy (SEM), transmission electron microscopy (TEM), electron diffraction (ED), electron energy loss spectroscopy (EELS), X-ray diffraction (XRD), Raman spectroscopy, and photoluminescence (PL).

Boron & Compounds, Structure, Boron compounds

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Single- and double-shelled coaxial nanocables of GaP with silicon oxide and carbon

Article Abstract:

Coaxial nanocables of gallium phosphide (GaP) core with three different typed single and double shells, namely, silicon oxide (SiO{sub x}), carbon (C), and SiO(sub x)/C, were synthesized by the chemical vapor deposition method. The deposition of C on the GaP nanowires and GaP/SiO(sub x) nanocables produces the GaP/C and GaP/SiO(sub x)/C nanocables respectively.

Silicon & Inorganic Compounds, Phosphorus & Compounds, Phosphorus compounds, Silicon compounds, Carbon compounds

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Controlled structure of gallium oxide nanowires

Article Abstract:

The chemical deposition of gallium/gallium oxide mixture and oxygen results in synthesization of gallium oxide nanowires. The growth of the nanowires, facilitated by the catalyst result in a less defect and random growth direction.

Science & research, Primary nonferrous metals, not elsewhere classified, Primary Smelting and Refining of Nonferrous Metal (except Copper and Aluminum), Gallium, Research, Observations, Chemistry, Physical and theoretical, Physical chemistry, Chemical synthesis

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