Formation process of Si-coated C60

Article Abstract:

The molecular structure and standard heat of formation for individual C60Sin clusters, where n = 1-60, were examined using a semiempirical molecular orbital method to study the formation process of these clusters. Results showed that when n < 3, each Si atom independently and preferentially bound to the 6/6 bonds of the C60 substrate. When n >/= 3, the adjacent Si atoms tend to form chemical bonds with each other aside form the bond formation between Si atoms and the C60.

Silicon compounds, Carbon compounds

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Ring formation in single-wall carbon nanotubes

Article Abstract:

Issues concerning the production of nanotube rings from single-wall carbon nanotubes by ultrasonic irradiation of linear nanotube segments are discussed.

Research and Development in the Physical, Engineering, and Life Sciences, Chemistry, Chemistry, Physical and theoretical, Physical chemistry

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