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Chemicals, plastics and rubber industries

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High-quality ultralong Sb2Se3 and Sb2S3 nanoribbons on a large scale via a simple chemical route

Article Abstract:

Large-scale ultralong single-crystalline Sb2Se3 and Sb2S3 nanoribbons are made respectively by reacting SbCl3 with selenium and sulfur powders in glycol solution. The growth mechanism of the nanoribbons is examined based on high-resolution transmission electron microscopy and the optical absorption experiment has revealed that Sb2Se3 and Sb2S3 nanoribbons are two semicompounds with bandwidth [E.sub.g] approximately and equal to 1.15 eV and [E.sub.g] approximately and equal to 1.56 eV, respectively.

Author: L.-M. Peng, Q. Chen, Y. Yu, R.H. Wang
Publisher: American Chemical Society
Publication Name: Journal of Physical Chemistry B
Subject: Chemicals, plastics and rubber industries
ISSN: 1520-6106
Year: 2006
Inorganic Dye and Pigment Manufacturing, Industrial inorganic chemicals, not elsewhere classified, Inorganic pigments, Antimony & Lithopone Pigments, Antimony Compounds, Selenium Compounds, Usage, Transmission electron microscopes, Glycols, Glycols (Class of compounds)

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High-quality ultralong Bi2S3 nanowires: Structure, growth, and properties

Article Abstract:

A simple one-step hydrothermal method for large-scale synthesis of ultralong single-crystalline Bi2S3 nanowires was reported and the nanowires were comprehensively characterized. The structure of the nanowires was determined to be of the orthorhombic phase, the growth direction was along [001] and the growth mechanism was investigated based on extensive high-resolution transmission electron microscopy observations.

Author: L.-M. Peng, Q. Chen, Y. Yu, C.H. Jin, R.H. Wang
Publisher: American Chemical Society
Publication Name: Journal of Physical Chemistry B
Subject: Chemicals, plastics and rubber industries
ISSN: 1520-6106
Year: 2005
Science & research, Research, Nanotechnology, Electron microscopy

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Effect of H2 on the electrical transport properties of single Bi2S3 nanowires

Article Abstract:

A study fabricated field effect transistors using Bi2S3 nanowires. It was found that the current of Bi2S3 nanowires is found to increase remarkably in H2 compared to that in a vacuum and that H2 enhances electronic mobility and carrier density within the nanowires dramatically.

Author: L.-M. Peng, Q. Chen, Y. Yu, X.L. Liang, Z.Y. Zhang, K. Yao
Publisher: American Chemical Society
Publication Name: Journal of Physical Chemistry B
Subject: Chemicals, plastics and rubber industries
ISSN: 1520-6106
Year: 2006
Silicon & Inorganic Compounds, Design and construction, Electric properties, Field-effect transistors, Field effect transistors, Electron mobility, Silicon compounds

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Subjects list: Chemical properties, Analysis, Bismuth
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