Interfacial charge-transfer absorption: 3. Application to semiconductor-molecule assemblies

Article Abstract:

A semiclassical model is proposed for interfacial charge-transfer absorption (IFCTA) to metals and semiconductors that consider the fact that, unlike molecules, both semiconductors and metals possess closely spaced occupied electronic levels and closely spaced unoccupied levels so that a common framework is appropriate for describing their interfacial charge-transfer processes. It is concluded that the photoinduced charge-transfer processes involve a small number of atoms per acceptor site on the surface of the nanoparticle.

Semiconductors, Semiconductors (Materials), Atomic properties, Nanoparticles

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Using the Marcus inverted region for rectification in donor-bridge-acceptor "wire" assemblies

Article Abstract:

A donor-bridge-acceptor (D-B-A) system inserted between two metal electrodes exhibit Ohmic behavior and positive differential conductances at small applied voltages and a symmetrical D-B-A systems shows negative differential conductances of being in the inverted region at greater driving force. By utilizing D/A couples with small lambda values, switching can be achieved at modest applied potentials.

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Implications of an electron-hopping model for charge transport through donor-bridge-acceptor assemblies connected to metal electrode

Article Abstract:

The development of an electron-hopping model for charge transport through donor-bridge-acceptor assemblies is presented. A detailed electrostatic analysis of the assembly is made for this purpose.

Electrostatics

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