Cold plasma extends trace metal detection capability

Article Abstract:

Inductively coupled plasma mass spectrometry (ICP-MS) may be used to determine if trace impurities such as iron, calcium and potassium are present in process chemicals. However, argon molecular ions curtail the process' ability to measure iron and potassium at the needed levels. Despite such a setback, a cold plasma process can aid ICP-MS in conducting a total trace analysis that can be done in a single procedure. The ICP-MS cold plasma process allows the achievement of detection limits lower than those that can be reached using graphite furnace AA.

Comment:

Inductively coupled plasma mass spectrometry may be used to determine if trace impurities are present in process chemicals

Semiconductor Devices, Article

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Characterize low-k and copper films in situ

Article Abstract:

Low-k and copper thin films pose a characterization problem for metrology tools such as traditional high-temperature stress tools. This is due to the fact that the oxidation-sensitive materials have to be processed or annealed in an atmosphere with very low partial pressure oxygen. Two types of 200 mm samples were studied, namely a chemical vapor deposition low-k wafer and four copper wafers. Results demonstrate the impact of in situ integrated metrology in terms of speed, ease and efficiency in evaluating data.

Thin Film Materials, Thin films

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Diagnosing latch-up with backside emission microscopy

Article Abstract:

Research was conducted to diagnose latch-up using backside emission microscopy. The backside device silicon was thinned, and rapid-sequence emission imaging of the light emitted by latch-up was carried out from the backside. The precise location of latch-up was found quickly and conclusively as a result of backside emission imaging. Showing the sequence of latch-up light emissions to design and layout personnel proved very helpful.

Microprocessor Chips, CPUs (Central processing units)

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