Laser solution for resist stripping

Article Abstract:

Oramir Semiconductor of Haifa, Israel has developed a photo-chemically assisted laser ablation technique for photoresist removal. The L-Stripper moethod, which is presently in beta-testing by a consortium, can initially process wafers at a rate of 3 min/6 in. wafer with one chamber operation. The procedure, which utilizes a combination of UV excimer laser ablation and reactive chemistry, is highly selective due to the temperature-dependent reactivity of the reactive gases. This enables the stripping of resist and side wall polymers without etching the thin gate oxide.

Israel, Oramir Semiconductor

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Bringing SOI wafer technology to the mainstream

Article Abstract:

Silicon on insulation (SOI) wafers are increasingly showing their potential as a way of improving silicon chip technologies. Although hitherto found in niche markets such as radiation-hardened circuits for space and militar applications, SOI is now being implemented by many chip manufacturers into digital device fabrication. It is expected that SOI's reduced capacitance will bring about performance improvements of 35%, as a survey of SOI material suppliers reveals that there is anticipation for a price per wafer that is 300% higher than that of prime wafers.

United States, Product information

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Extending optical lithography with the CARL process

Article Abstract:

Siemens AG of Erlangen, Germany's patented chemical amplification resist lines (CARL) process expands the capability of i-line lithography devices to dimensions under 0.20 um. CARL was developed to utilize the capabilities of top surface imaging an bi-layer resist techniques. The CARL process has been demonstrated to allow contact holes of 0.2 um and l/s of 0.22 um. According to Dr Michael Meier, technology manager at Clariant AG of Weisbaden, Germany, CARL allows smaller features if optical enhancements such as faceshift masks are employed.

Comment:

Chemical amplification resist lines process expands the capability of i-line lithography devices to dimensions under 0.20 um

Semiconductor Devices, Germany, Siemens AG, Article

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