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A comparison of the dynamics of continuous and discrete event systems

Article Abstract:

Estimates of the sensitivity of system performance based on one sample path of a system are provided by perturbation analysis of discrete event dynamic systems (DEDSs). The results of perturbation analysis associated with closed queueing networks are analyzed, and the basic principles of perturbation analysis are shown to be explainable using a dynamic perspective. Perturbation generation and perturbation propagation rules can be seen as counterparts of the linearization theory of nonlinear continuous variable dynamic systems. The steady-state effect of a perturbation is explained by the notion of perturbation realization; this also shows the special dynamic feature of a closed queueing network. The sensitivity of steady-state throughputs can be calculated using the realization probability; the ramifications of DEDSs for systems analysts are discussed.

Author: Cao, Xi-Ren
Publisher: Institute of Electrical and Electronics Engineers, Inc.
Publication Name: Proceedings of the IEEE
Subject: Electronics
ISSN: 0018-9219
Year: 1989
Systems analysis, Product introduction, System Design, Performance Measurement, Dynamic Systems, Discrete Simulation, New Technique, Queuing Networks, technical

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UHV/CVD growth of Si and Si:Ge alloys: chemistry, physics, and device applications

Article Abstract:

Research was conducted on the ultrahigh vacuum/chemical vapor deposition (UHV/CVD) growth of silicon and silicon-germanium alloys. CVD is widely used in film growth methods since it provides excellent film uniformity, conformality, compatibility and low apparatus costs. However, it encounters difficulties when used in the complicated process of silicon epitaxy. The UHV/CVD approach was developed to resolve silicon epitaxy complexity. It relies on hydrogen passivation and requires removal of native oxide from the silicon surface. The UHV/CVD system is pumped at all times and uses high-density coaxial packaging geometry. It induces background partial pressure of contaminants and operates at low pressure. The temperature range chosen for the study was 400-500 degrees celsius.

Author: Meyerson, Bernard S.
Publisher: Institute of Electrical and Electronics Engineers, Inc.
Publication Name: Proceedings of the IEEE
Subject: Electronics
ISSN: 0018-9219
Year: 1992
Integrated circuit fabrication, Chemical engineering

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Molecular Dynamics and Monte Carlo Simulations in Solid-State and Elementary Particle Physics

Article Abstract:

The ICL DAP (Distributed Array Processor) consists of a 64 x 64 array of parallel-processing elements which each have four kbits of storage and a simple one-bit processor. To exploit the parallelism of DAP, an extension of Fortran has been developed. Molecular dynamics of a system are well suited to study on DAP, and the melting of the molecular solid naphthalene and phase transitions of SF6 are modelled. Lattice gauge theory is studied using the Monte Carlo method. The basic theory is tested by overlaying a lattice on a region of space-time and examining the function represented on the lattice. The three-dimensional Ising model is studied through real-space renormalization. Computational schemes and the DAP architecture are illustrated.

Author: Bowler, K.C., Pawley, G.S.
Publisher: Institute of Electrical and Electronics Engineers, Inc.
Publication Name: Proceedings of the IEEE
Subject: Electronics
ISSN: 0018-9219
Year: 1984
Supercomputers, Physics, Supercomputer, Parallel processing, FORTRAN, FORTRAN (Programming language), Array Processor, Monte Carlo Methods, Scientific Computers, Particle Physics

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Subjects list: Scientific Research
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