Abstracts - faqs.org

Abstracts

Electronics

Search abstracts:
Abstracts » Electronics

Making GaAs integrated circuits

Article Abstract:

Gallium arsenide (GaAs) ICs offer superior speed and radiation hardness, but converting GaAs R&D into production has proved difficult. Pilot production of LSI 16K RAMs and 6K gate arrays has begun under the auspices of the Defense Advanced Research Projects Agency. Rockwell Intl's Microelectronics R&D Center is producing GaAs ICs using ion implanted depletion mode metal semiconductor field-effect transistor (MESFET) technology, while McDonnell Douglas' Microelectronic Center is using ion implanted junction FET technology to create GaAs devices. GaAs production issues reviewed include: facilities, equipment, production and quality control, materials, and processing (wafer prep, encapsulation, lithography, metallization, deposition, pattern definition, design, yield, failure, and assembly.) Epitaxial heterostructures are an emerging technology for GaAs IC fabrication.

Author: Kirkpatrick, Conilee G.
Publisher: Institute of Electrical and Electronics Engineers, Inc.
Publication Name: Proceedings of the IEEE
Subject: Electronics
ISSN: 0018-9219
Year: 1988
Manufacturing, Product development, Gallium Arsenide Semiconductor, Semiconductor Preparation, Transistor, State-of-the-Art, technical, Large-Scale Integration

User Contributions:

Comment about this article or add new information about this topic:

CAPTCHA


The new joint R&D

Article Abstract:

Collaborative R&D between multiple, often competing companies results in 'leaky' technology which is used by many firms in a common manner. Such collaborations are becoming more common in Japan, the US, and Europe, and are of two types: the secretariat and the operating entity. Advantages of joint R&D include reduced time and cost of development, faster time to market, reduced product life cycle and improved process knowledge. Secretariats are coordinating bodies for distributed R&D efforts and are exemplified by the SRC, European Community's Esprit, and the Joint European Submicron Silicon Initiative. Operating entities typically have their own R&D facilities and are exemplified by the Interuniversity Micro-Electronics Center (Leuven, Belgium) and the Microelectronics and Computer Technology Corp. Other consortia and the future of collaborative R&D are discussed.

Author: Ouchi, William G.
Publisher: Institute of Electrical and Electronics Engineers, Inc.
Publication Name: Proceedings of the IEEE
Subject: Electronics
ISSN: 0018-9219
Year: 1989
Semiconductor industry, Consortia, Strategic Planning, Joint Venture, Organization Structure, Consortium

User Contributions:

Comment about this article or add new information about this topic:

CAPTCHA



Subjects list: Industrial research, Research and Development, Trends
Similar abstracts:
  • Abstracts: Status of device-qualified GaAs substrate technology for GaAs integrated circuits. The development of the first LSI GaAs integrated circuits and the path to the commercial market
  • Abstracts: Telecommunications applications of integrated optics and optoelectronics. Proceedings letters
  • Abstracts: High-frequency quasi-resonant converter technologies. A Flash-Type Frequency-to-Code Converter
  • Abstracts: Cooperative research at MCC: a focus on semiconductor-related efforts. Semiconductor research at Bellcore
This website is not affiliated with document authors or copyright owners. This page is provided for informational purposes only. Unintentional errors are possible.
Some parts © 2025 Advameg, Inc.