Prolog to model based processing of signals: a state space approach

Article Abstract:

Accurate estimation of closely spaced frequencies of multiple, superimposed sinusoids is a problem often encountered in electrical engineering. Model-based eigendecomposition methods have been used to attain desired information from these problems. Polynomial parameterization to represent the linear model is the classical method used in signal processing. Rao and Arun's paper discusses a state space representation of the linear model, and contains detailed explanations and evaluations regarding polynomial and state space representations. The authors advocate that state space representations should be adopted, and provide algorithms towards this end. The research presented in the paper should interest engineers researching signal processing, as well as those who analyze noise data and are looking for an alternative to the polynomial approach.

Mathematical models, Algorithms, Polynomials, Algorithm, Signal processing, Measurement, Parameters

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Silicon-based semiconductor heterostructures: column IV bandgap engineering

Article Abstract:

The heterostructures of semiconductors expand the list of possible device configurations and introduce new physical phenomena, including two-dimensional carrier gases, real space carrier transfer, tunable optical absorption, tunneling, and quantum size effects. Silicon lacks a natural semiconductor partner, so the exploitation of these effects was confined to compound semiconductors. High quality GE(subscript x)Si(subscript 1-x)/Si heterostructures are grown with the use of strained layer epitaxy. These materials are applied to a wide range of heterostructure devices. The methods of strained layer growth, the bandstructure of the resulting material and its use in test devices are reviewed.

Semiconductor devices, Integrated circuits, Electronic components, Engineering, Semiconductor Device, Semiconductor Preparation

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Ultra-high-speed modulation-doped field-effect transistors: a tutorial review

Article Abstract:

The ultra-high-speed modulation-doped field-effect transistor (MODFET) is a new type of transistor. A tutorial review describes the MODFET, its history, and its application to ultra-low-noise, medium-power, ultra-wide-band traveling-wave amplifiers and ultra-high-speed digital logic circuits. More advances in material growth and device scaling, improvements in cutoff frequencies, switching speed, noise, and power are expected in the near future. Microwave low-noise MODFET technology is employed in commercial, scientific and military telecommunications with great success. The MODFET power technology is relatively immature.

Semiconductor industry, Field effect transistors, Modulation Technique, Tutorial, Transistor, Field-Effect Transistors

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