Submillimeter-wave detection with superconducting tunnel diodes

Article Abstract:

Superconductor-insulator-superconductor (SIS) diodes have become the receiver of choice for millimeter spectroscopic radio astronomy. The technology for fabricating SIS circuits has improved considerably since the discovery of the SIS mixer, so nearly ideal niobium devices with submicron feature sizes can be fabricated. SIS mixers are examined, focusing on the use of the mixers at submillimeter wavelengths; a theoretical framework for understanding SIS submillimeter detection using an optical photodiode theory is provided. Gain and noise in the SIS mixer are described in terms of mixing on a photodiode, and the role of impedance matching in the design of SIS mixers is examined. Various methods for achieving good impedance match at submillimeter frequencies are described, and the state of the submillimeter SIS mixer art is summarized.

Integrated circuits, Circuit design, Astronomy, Telecommunications, Superconducting devices, Industry Analysis, Communications Technology, Superconductive Devices, Receiver, Communications Circuits, Spectrometry

---

Resonant tunneling quantum-dot diodes: physics, limitations, and technological prospects

Article Abstract:

Quantum dots are 'zero-dimensional' semiconductor nanostructures, or structures where an electron is quantum-mechanically confined in all three spatial dimensions. The properties and electronic structure of the current generation of resonant-tunneling quantum-dot structures are discussed. Quantum dots apparently represent a viable structure to allow continued down-scaling of critical circuit geometries beyond currently perceived limits for conventional very large scale integration (VLSI) devices. Quantum-dot diodes, as they are currently fabricated, have impediments that prevent the full realization of their potential. These limitations and measures for their solution are discussed.

Industrial research, Quantum electronics, Diodes, Very large scale integration, Research and Development, Outlook, Limitations, Very-Large-Scale Integration

---

Theory of instability-generated divergence of intense ion beams from applied-B ion diodes

Article Abstract:

Rapid progress has been made since the late 1980s in the development of theoretical comprehension of the physics of applied-B ion diodes. New insights into the effects of electromagnetic instabilities on ion beam divergence have followed success in predicting voltage-operating and diode-current characteristics. Recent advances in the numerical simulation and analytic theory of applied-B ion diodes are discussed in general. Diodes being tested experimentally on the Particle Beam Fusion Accelerator II at Sandia National Laboratories in New Mexico are discussed in detail.

Electromagnetic fields, Technology, Scientific Research

Similar abstracts:

• Abstracts: Scattering cross section of composite conducting and lossy dielectric bodies. Time-domain response of multiconductor transmission lines
• Abstracts: Short-wavelength lasers. Recent advances in long-wavelength semiconductor lasers for optical fiber communication
• Abstracts: Holographic implementation of a fully connected neural network. Imaging with reduced holographic data - an application of the AR model to a multifrequency hologram
• Abstracts: Neural computation of arithmetic functions. On the convergence properties of the Hopfield model. Construction of the Voronoi Diagram for "one million" generators in single precision arithmetic
• Abstracts: Teaching network connectivity using simulated annealing on a massively parallel processor

This website is not affiliated with document authors or copyright owners. This page is provided for informational purposes only. Unintentional errors are possible.