The Engineering Research Center for Compound Semiconductor Microelectronics

Article Abstract:

The Engineering Research Center for Compound Semiconductor Microelectronics (CCSM) is developing a new generation of high-speed communications and data processing technology that uses the bandwidth, immunity to electromagnetic interference, and connectivity of optical interconnects. The project will require the design, manufacture, and integration of high-performance electrical and optical devices in monolithic optoelectronic integrated circuits (OEIC). The center is working to establish, explore, and exploit the compound semiconductor engineering science and technology base to support development of OEICs. Work is also being done to overcome the 'barriers to integration' resulting from the dimensional disparity of optical and electronic devices, the requirement for a simple optically self-aligned planar processing technology, and the need for sophisticated modeling and design tools.

Semiconductor industry, Circuit design, Integrated circuit fabrication, Industrial research, Product introduction, Optoelectronic devices, Microelectronics, Technical, Research and Development, New Technique, Research Design, Optical Computers

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Theory and applications of near ballistic transport in semiconductors

Article Abstract:

Ballistic transport, an ideal condition wherein electrons - or other particles - move without any friction-like interactions, can be approached under certain conditions in semiconductor experiments, but practical applications are far off. Related to ballistic transport is velocity overshoot, which is the time or space necessary for the ballistic electron momentum distribution to arrive at a steady state. The extent of ballistic transport and velocity overshoot in semiconductors is an inverse property of the scattering rate due to crystal imperfections. Research has shown that the use of 'ballistic launchers' and 'barrier detectors' can be used to observe and manage near-ballistic electron distribution. Such structures, combined with a base as terminal devices, can function as 'planar doped barrier' transistors and 'tunneling hot electron transfer amplifier' transistors.

Future Technologies, Functional Capabilities, Scientific Research, Particle Physics

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Diluted magnetic semiconductors

Article Abstract:

Diluted magnetic semiconductor (DMS) includes a wide range of semiconductor alloys formed when magnetic ions are substitutionally introduced into a compound semiconductor. One reason for interest in DMS is the hope that introducing magnetic interactions will cause modification of the electronic properties of a semiconductor. The band structure of the material determines its basic semiconducting properties. Possible applications of DMS fall into three categories: dependence on purely semiconducting properties of DMS alloys; making use of the specific optical properties of Mn-superscript 2+; and basing a device on the sp-d exchange interaction.

Magnetic storage media, Magnetic Media, Analysis, IEEE

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