Ge/Si nanowire heterostructures as high-performance field-effect transistors

Article Abstract:

The potential of Ge/Si nanowire heterostructures as high performance field-effect transmission (FETs) is explored by fabricating devices using thin HfO2 or ZrO2 high-k-gate dielectrics and metal top gate electrodes. Cross-sectional transmission electron microscopy (TEM) images show that both the high-k and metal top gate conforms to the approximately circular cross-section of the nanowire, and also verify the Ge/Si core/shell structure.

Field-effect transistors, Field effect transistors

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Ge/Si nanowire heterostructures as high-performance field-effect transistors

Article Abstract:

The potential of Ge/Si nanowire heterostructures as high performance field-effect transmission (FETs) is explored by fabricating devices using thin HfO2 or ZrO2 high-k-gate dielectrics and metal top gate electrodes. Cross-sectional transmission electron microscopy (TEM) images show that both the high-k and metal top gate conforms to the approximately circular cross-section of the nanowire, and also verify the Ge/Si core/shell structure.

Primary nonferrous metals, not elsewhere classified, Primary Smelting and Refining of Nonferrous Metal (except Copper and Aluminum), Massachusetts, MOS Field-Effect Transistors, Germanium, Design and construction, Observations, Dielectrics, Dielectric materials, MOSFET (Transistors), Properties, Metal oxide semiconductor field effect transistors

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High-speed integrated nanowire circuits

Article Abstract:

The use of low-temperature process is presented to integrate high-performance multi-nanowire transistors into logical inverters and fast ring oscillators on glass substrates. The process gives a high yield of devices that show reliable, well-defined signal inversion under direct current conditions.

Transistors, Integrated circuit design, Circuit design, Electric inverters, Circuit designer

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