Indium phosphide nanowires as building blocks for nanoscale electronic and optoelectronic devices

Article Abstract:

The assembly of nanometre-scale transitors from indium phosphide nanowires is described.

Molecular electronics, Optoelectronics

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Single-crystal metallic nanowires and metal/semiconductor nanowire heterostructures

Article Abstract:

An integrated contact and interconnection solution that overcomes the size constraint by selective transformation of silicon nanowires into metallic nickel silicide (NiSi) nanowires is presented. The fabrication of nickel silicide/silicon (NiSi/Si) nanowire heterostructures with automatically sharp metal-semiconductor interfaces is also demonstrated.

United States, Science & research, Integrated circuit fabrication

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Synthesis and characterization of carbide nanorods

Article Abstract:

Carbide nanorods are prepared by the reaction of carbon nanotubes with volatile metals and their oxides or halides. The diameters of these rods are 2 to 30 nanometer and the length is 20 micron. Using this technique solid carbide nanorods of TiC, NbC, Fe3C, SiC and BCx can be prepare with properties such as magnetism and superconductivity similar to that of the bulk material. These rods can be used as reinforcements in metal and ceramic matrix composites and to pin vortices in high-temperature superconductors.

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