Size-controlled percolation pathways for electrical conduction in porous silicon

Article Abstract:

Silicon can be chemically etched into a microporous network, and it shows electro and photoluminescence exhibited at visible wavelengths. Optoelectronic technology based on silicon is thus a possibility. One problem in understanding transport mechanisms is that stable contacts cannot easily be achieved. Good electrical contacts are not needed if photoemission is stimulated by certain types of radiation. Porous silicon films have a conductivity which varies according to temperature and are insulating when temperatures are low. The silicon backbone houses nanowires and their size distribution appears to affect conductivity.

Optoelectronic devices, Silicon-on-isolator, Silicon-on-insulator

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Electronic properties of carbon toroids

Article Abstract:

Theoretical support for the proposition made by Liu and colleagues that carbon toroids show interesting transport properties, is provided. The calculated structure of the C576 toroid was used as a test case, using the finite-field London theory to measure magnetic properties. The magnetic properties were related to the electrical conductivity by scaling the quantum mechanical result with the free-electron value of magnetic susceptibility.

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Return of the itinerant electron

Article Abstract:

Young and colleagues have demonstrated magnetic polarization at a temperature of 600 K in a dilute, three-dimensional electron gas. Bloch first suspected that electron gas was susceptible to magnetic ordering at low density in 1929. Young and colleagues used calcium hexaboride and replaced some of the calcium atoms with lanthium atoms. Effective electron density is varied by changing the impurity concentration.

Observations, Magnetization

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