Negative differential resistance in metallic and semiconducting clusters
Article Abstract:
An ab initio density functional theory (DFT) calculations combined with a Green function approach for electron transfer and molecular dynamics (MD) simulations are performed to analyze the possible mechanisms of observed negative differential resistance (NDR) in experiments involving metallic gold systems. It was seen that switching and NDR were achieved due to electronic and electromechanical effects yielding cluster formation and hence electronic devices could be made from organic molecules as well as from small clusters.
Publication Name: Journal of Physical Chemistry B
Subject: Chemicals, plastics and rubber industries
ISSN: 1520-6106
Year: 2004
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Nanometer-size conducting and insulating molecular devices
Article Abstract:
Quantum ab initio techniques are used to demonstrate that molecules of nanometer sizes could be characterized as low and high impedance devices, needed as building blocks in the field of molecular electronics. The difference in conductance between the two groups of molecules is due to the difference in their frontier molecular orbitals.
Publication Name: Journal of Physical Chemistry B
Subject: Chemicals, plastics and rubber industries
ISSN: 1520-6106
Year: 2004
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Spintronics
Article Abstract:
Prototype magnetic random access memories (MRAM) chips are characterized by rapid, low energy switching and excellent durability. This novel approach to integrated memory is expected to have immediate impact in the niche market of high performance, embedded memory.
Publication Name: Journal of Physical Chemistry B
Subject: Chemicals, plastics and rubber industries
ISSN: 1520-6106
Year: 2005
User Contributions:
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