Surface chemistry in the chemical vapor deposition of electronic materials
Article Abstract:
Surface chemistry of the substrate influences the surface topography and the strength of adsorption, and conformal covering of the surface topography of chemical vapor deposited (CVD) films on semiconductors. Effect of atomic hydrogen adsorption on the growth of CVD layer on semiconductor surfaces, diamond CVD, and plasma-enhanced CVD is discussed. Models of CVD process are presented for Si epitaxial CVD, Al films from triisobutylaluminum, and TiSi(sub 2) CVD layer.
Publication Name: Chemical Reviews
Subject: Chemistry
ISSN: 0009-2665
Year: 1996
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Methods for preparation of catylic materials
Article Abstract:
The methods for producing and reproducing catalytic materials are discussed. Beyond the basic blending and mounting approaches to catalyst manufacture, using precipitation and impregnation, a newer middle-ground transforming method is also available. Both two-dimensional and three-dimensional chemistry processes and the benefits of each are addressed, with a focus on industrial needs and limits.
Publication Name: Chemical Reviews
Subject: Chemistry
ISSN: 0009-2665
Year: 1995
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Surface chemistry of silicon
Article Abstract:
An overview of silicon surface chemistry is presented. Silicon crystals exhibit a diamond structure. Dangling bonds are created on new surfaces when silicon crystals are broken or cut. Such bonds are the source of silicon surface chemical activity. Using atomic hydrogen chemisorption to cap dangling bonds eliminates a surface's ability to react with potential adsorbate molecules.
Publication Name: Chemical Reviews
Subject: Chemistry
ISSN: 0009-2665
Year: 1995
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