IMEC programs prepare for next-generation CMOS
Article Abstract:
IMEC of Leuven, Belgium, has established industrial affiliation programs to develop solutions for the introduction of 0.13 micrometer CMOS technology. Technologies needed for next-generation CMOS include 193 nm optical lithography, copper metalization and low-k dielectrics as inter- metal materials. Better phase shift masks and optical proximity correction are required to fabricate devices with features half the size of the laser wavelength.
Publication Name: Semiconductor International
Subject: Electronics and electrical industries
ISSN: 0163-3767
Year: 1999
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Europeans to develop ferroelectric CMOS process
Article Abstract:
ST Microelectronics and Inter-University Microelectronics Center (IMEC)Leuven, Belgium, will develop and integrate ferroelectric memory cells into a CMOS process. A joint team at the IMEC 200 mm pilot line in Leuven and the STM Development Center in Catania, Sicily will concentrate on meeting the short timescale of the project for 1 Mbit memories. The ferroelectric strontium bismuth tantalate is known for its superior voltage scalability.
Publication Name: Semiconductor International
Subject: Electronics and electrical industries
ISSN: 0163-3767
Year: 2000
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Philips advances 180 nm CMOS
Article Abstract:
Philips Semiconductors of Nijemegen, Netherlands, improved the 180 nm CMOS process by allowing it to operate at its new MOS4 fab extension. The use of low-k dielectrics, an additional local interconnect metal layer and new high density memory cells, makes the enhancement possible. CMOS 18, a dual threshold voltage process, can be customized for both high speed and low leakage applications.
Publication Name: Semiconductor International
Subject: Electronics and electrical industries
ISSN: 0163-3767
Year: 2000
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