Recent advances in VLSI layout
Article Abstract:
Advances in computer-aided design (CAD) of very-large-scale integrated (VLSI) circuits are driving application-specific integrated circuit (ASIC) market growth. The popularity of ASIC sea-of-gates and building-block technologies is largely a result of CAD tool advances which are vital to the layout of VLSI chips that are more complex, larger, with declining feature size. Four aspects of VLSI layout detailed are: placement and floor planning, routing, computational geometry (CG) and layout engines. Placement and floorplanning of sea-of-gates and building-block ASICs focus on connectivity and connectivity plus module geometry. Global and detailed routing, rip-up and rerouting are discussed. CG advances in design rule checking, gridless routing and layout compaction are described. 'Hardware accelerators,' parallel-processing systems and supercomputers are facilitating VLSI layout.
Publication Name: Proceedings of the IEEE
Subject: Electronics
ISSN: 0018-9219
Year: 1990
User Contributions:
Comment about this article or add new information about this topic:
Strained layer heterostructures, and their applications to MODFET's, HBT's, and lasers
Article Abstract:
Recent developments in strained layer epitaxial systems are described. Strained layers provide increased freedom in the design of technologically important heterostructures and devices that has led to the development of device structures that can be tailored for a particular application. The performance of these device structures is unmatched by lattice-matched systems. Modulation-doped field-effect transistors (MODFET) fabricated with strained InGaAs channels on gallium-arsenide (GaAs) and InP substrates are shown to have superior performance. SiGe alloys have extended the strained layer concept to elemental semiconductors. SiGe heterojunction bipolar transistors (HBT) are shown to exhibit current gains of over 5,000. Quantum well lasers with compressively strained InGaAs active layers have reduced threshold current density.
Publication Name: Proceedings of the IEEE
Subject: Electronics
ISSN: 0018-9219
Year: 1993
User Contributions:
Comment about this article or add new information about this topic:
- Abstracts: Applications of VLSI circuits to medical imaging. Evolution of the MOS transistor - from conception to VLSI
- Abstracts: Making GaAs integrated circuits. Nanostructure patterning
- Abstracts: GaAs Schottky diodes for THz mixing applications. Radiation effects in GaAs FET devices
- Abstracts: Applied neural control in the 1990s. Microwave diversity imaging and automated target identification based on models of neural networks
- Abstracts: Recent advances in magnetic resonance imaging. Electrical stimulation of excitable cells--a model approach