Frequency dependence of GaAs FET equivalent circuit elements extracted from the measured two-port S parameters
Article Abstract:
A technique is developed for determining and optimizing circuit element values for GaAs FETs from eight measured independent data values of the two-port S parameters of an eight-element equivalent circuit. A ten-element equivalent circuit can closely predict GaAs FET wafer parameters S parameters up to 18GHz. Inductances are needed in both equivalent circuits to correct for frequency dependence. Development, equations, and validation of the equivalency circuit functioning are described.
Publication Name: Proceedings of the IEEE
Subject: Electronics
ISSN: 0018-9219
Year: 1988
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Use of a surface-acoustic-wave (SAW) device to monitor etching of thin films
Article Abstract:
A surface-acoustic-wave (SAW) device can monitor etching of thin films. The oscillation path of a delay-line-stabilized SAW is coated with a film of the material to be etched. As material is removed, the mass loading decreases, increasing the oscillator frequency. This method allows measurement of substrate temperature, as well as the mass of material removed.
Publication Name: Proceedings of the IEEE
Subject: Electronics
ISSN: 0018-9219
Year: 1987
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