Diamond transistor performance and fabrication
Article Abstract:
Device properties of diamond and recently developed diamond device fabrication techniques are reviewed. Two advantages of diamond semiconductors in high-frequency, high-power transistors are their high thermal conductivity and high electric-field breakdown. High thermal conductivity allows a device to dissipate more power for the same temperature rise. Diamond thermal conductivity is between 40 and 500 K, the highest of any known solid at room temperature. Diamond's electric-field breakdown has not been determined accurately, but breakdown voltage measurements of diamond diodes indicate that it is above 4 x 10 to the sixth power V centimeters(superscript minus 1) and may be as high as 2 x 10 to the seventh power V centimeters(superscript minus 1). Diamond doping by homoepitaxy, diamond etching, device quality silicon-dioxide-diamond interface and ohmic contact technology are examined.
Publication Name: Proceedings of the IEEE
Subject: Electronics
ISSN: 0018-9219
Year: 1991
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Memory cell and technology issues for 65-and 256-Mbit one-transistor cell MOS DRAMs
Article Abstract:
Requirements and issues for 64- and 256-MBit MOS DRAMs based on one-transistor cells have been identified through analysis of key parameters. Experimental models and assessment of expected improvements have led to projected requirements for die size, storage capacitance, and other parameters. The achievement of an improved capacitor dielectric and the need to incorporate on-chip error detection and correction (EDC) are potential obstacles to further chip integration. It is expected that 64-Mbit DRAM's will be produced in the 1990s. Production of 256-Mbit DRAM's will require major breakthroughs in capacitance, EDC, and charge capacity.
Publication Name: Proceedings of the IEEE
Subject: Electronics
ISSN: 0018-9219
Year: 1989
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