Radiation testing of semiconductor devices for space electronics
Article Abstract:
Radiation effects testing, hardness assurance, and part testing of semiconductor devices that will be used in spacecraft on-board systems requires an understanding of the space radiation environment and the radiation effects on spacecraft electronics. The near-earth space radiation environment consists mainly of electrons and protons in trapped radiation belts, transient solar flare radiation, and deep-space cosmic rays. The major effects on microelectronic devices are ionization or total dose effects in dielectrics, single-particle transient ionization in silicon and displacement damage in silicon. The goals of radiation testing are to understand the interactions of radiation with circuits leading to failure, characterize response nature of device technologies for part selection, and determine lot acceptability. Part selection and hardness assurance are also described.
Publication Name: Proceedings of the IEEE
Subject: Electronics
ISSN: 0018-9219
Year: 1988
User Contributions:
Comment about this article or add new information about this topic:
The design of radiation-hardened ICs for space: a compendium of approaches
Article Abstract:
Five major technologies for the design, development, and fabrication of radiation-hardened integrated circuits (RHICs) for spaceborne applications are described are reviewed. All are still susceptible to single-event impacts, and total ionizing radiation-dose effects can affect technologies with oxide contacting active devices. The increasing number of commercial and defense systems in space has made it vital that RHIC devices be employed to ensure reliability and durability. RHIC development requires selection of appropriate technology, characterization of parts in a simulated application environment, simulation of chip response in the environment, and selection of optimum technology. Specific papers address the design of hardened bulk-epi CMOS ICs, CMOS-SOS ICs, bipolar digital ICs, bipolar analog ICs and gallium-arsenide SRAMs.
Publication Name: Proceedings of the IEEE
Subject: Electronics
ISSN: 0018-9219
Year: 1988
User Contributions:
Comment about this article or add new information about this topic:
- Abstracts: Power semiconductor devices: an overview. Optoelectronic integrated circuits
- Abstracts: Radiation effects on microelectronics in space. The space radiation environment for electronics
- Abstracts: Modulation and coding for satellite and space communications. Inter-system communications-networking
- Abstracts: Reliability issues of Flash memory cells. Neuromorphic electronic systems
- Abstracts: Statistical process control in semiconductor manufacturing. Discrete-index Markov-type random processes