Reliability issues of Flash memory cells
Article Abstract:
The development of Flash electrically erasable programmable read-only memory (EEPROM) has been an important achievement in the field of nonvolatile semiconductor memories. A source-erase type Flash memory cell called the ETOX cell was proposed in 1985 while a NAND structured cell was proposed in 1987. These developments were prompted by the cost-effective advantages on Flash EEPROM as compared to conventional EEPROM. Reliability-related concerns such as disturb, endurance and retention for both structure cells underscore the merits of each type of structured cell. The reliability of the tunnel oxide is a major issue for Flash EEPROMs. For the interpoly dielectrics, the relevant issues are low density, long mean time to failure and charge retention capability. The future of Flash EEPROM in the nonvolatile memory market is encouraging, especially in the area of conventional magnetic hard disk replacement by nonvolatile memories.
Publication Name: Proceedings of the IEEE
Subject: Electronics
ISSN: 0018-9219
Year: 1993
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Neuromorphic electronic systems
Article Abstract:
Biological information-processing systems can be orders of magnitude more effective than digitally-derived methods for solving many problems. Biological systems use basic physical phenomena as computation primitives. Information in such systems can be represented by analog signals, which increases system durability and decreases power consumption. Adaptive analog technology is used in biological systems to reconcile differences in system components, and this adaptive technology is the basis for learning systems. Biological solutions are particularly adept at solving problems with ill-conditioned data and relative computations. Experiments suggest that adaptive analog systems use 10,000 times less power than digital systems and can occupy 100 times less silicon than digital systems.
Publication Name: Proceedings of the IEEE
Subject: Electronics
ISSN: 0018-9219
Year: 1990
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