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Chemicals, plastics and rubber industries

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Conditions under which heterogeneous charge-transfer rate constants can be extracted from transient photoluminescence decay data of semiconductor/liquid contacts as determined by two-dimensional transport modeling

Article Abstract:

The two-dimensional simulation code ToSCA was used to conduct an extensive series of digital simulations of the decay dynamics of photoexcited charge carriers at a semiconductor/liquid interface. The objective is to identify conditions with respect to excitation intensity and applied potential where the rate constants for charge transfer and surface recombination can be extracted from the photoluminescence decay data. Results prove new insight into the analysis of photoluminescence decay data at semiconductor/liquid contacts.

Author: Lewis, Nathan S., Anz, Samir J., Kruger, Olaf
Publisher: American Chemical Society
Publication Name: Journal of Physical Chemistry B
Subject: Chemicals, plastics and rubber industries
ISSN: 1520-6106
Year: 1998
Charge transfer, Photoluminescence

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Simulations of the steady-state current density vs potential characteristics of semiconducting electrodes

Article Abstract:

A study was conducted to analyze the steady-state current density versus potential behavior of semiconductor/liquid interfaces. A series of digital simulations was carried out. Results indicated that the photovoltage of an n-type semiconductor/liquid interface should not change if the concentration of the minimized form of the redox species is held constant but the concentration of the oxidized form of the redox species is varied over a significant range in the solution phase.

Author: Lewis, Nathan S., Anz, Samir J.
Publisher: American Chemical Society
Publication Name: Journal of Physical Chemistry B
Subject: Chemicals, plastics and rubber industries
ISSN: 1520-6106
Year: 1999
Electrodes

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Photoelectrochemical behavior of n-GaAs and n-AlxGa1-xAs in CH3CN

Article Abstract:

It has been established that n-GaAs/CH3CN contacts are subject to partial Fermi level pinning in response to a change in E(A/A-) over a wide potential range. The members of the ternary n-AlxGa1-xAs alloy series show similar electrochemical behaviour to that of the parent n-GaAs electrode.

Author: Casagrande, Louis G., Juang, Agnes, Lewis, Nathan S.
Publisher: American Chemical Society
Publication Name: Journal of Physical Chemistry B
Subject: Chemicals, plastics and rubber industries
ISSN: 1520-6106
Year: 2000
Electrochemistry, Gallium arsenide

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Subjects list: Research, Semiconductors
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