Electron transport through rectifying self-assembled monolayer diodes on silicon: Fermi-level pinning at the molecule-metal interface

Article Abstract:

A strong metal-induced Fermi-level pinning that completely controls the electrical behavior of the molecular rectifying diodes is reported. The results have shown that Fermi-level pinning at the [pi] group/metal interface is responsible for the absence of a dependence of the rectification effect on the nature of the [pi] groups, even though the groups examined are selected to have significant variations in their electronic molecular orbitals.

Electron transport, Atomic properties, Fermi surfaces

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New route for stabilizing silicon fullerenes

Article Abstract:

The structural models of silica-coated silicon fullerenes, which arise from a structurally stable building block [Si.sub.3][O.sub.2], are presented. The density functional theory calculations have indicated that coating silica on silicon clusters would be a new way for stabilizing silicon fullerenes, which might be employed in nanotechnology.

Nanotechnology, Fullerenes

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