Negative differential resistance in metallic and semiconducting clusters

Article Abstract:

An ab initio density functional theory (DFT) calculations combined with a Green function approach for electron transfer and molecular dynamics (MD) simulations are performed to analyze the possible mechanisms of observed negative differential resistance (NDR) in experiments involving metallic gold systems. It was seen that switching and NDR were achieved due to electronic and electromechanical effects yielding cluster formation and hence electronic devices could be made from organic molecules as well as from small clusters.

Semiconductor Devices, Analysis, Semiconductor device, Chemistry, Physical and theoretical, Physical chemistry, Cluster analysis

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Nanometer-size conducting and insulating molecular devices

Article Abstract:

Quantum ab initio techniques are used to demonstrate that molecules of nanometer sizes could be characterized as low and high impedance devices, needed as building blocks in the field of molecular electronics. The difference in conductance between the two groups of molecules is due to the difference in their frontier molecular orbitals.

Molecular structure, Spectra, Molecular electronics

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Spintronics

Article Abstract:

Prototype magnetic random access memories (MRAM) chips are characterized by rapid, low energy switching and excellent durability. This novel approach to integrated memory is expected to have immediate impact in the niche market of high performance, embedded memory.

Science & research, Washington, DC, Research, Washington, D.C., Semiconductor films, MRAM (Computer memory)

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