Improving copper interconnects: a search for useful dopants

Article Abstract:

The need for product improvement of metal interconnects has led the industry to shift from the sputter-deposited and dplasma-etche daluminum alloys to damascene structures, CMP, copper seed layers and copper electroplating. The trend is driven by the higher electrical conductivity of copper which is about 45% higher than Al-Cu. The use of copper requires fewer interconnect levels. Also, copper can display a higher eletromigration rate at surfaces and interfaces. However, the move to a higher current density level may require the use of cadmium and zinc as dopants for copper to improve electromigration resistance with a slight increase in resistivity.

Printed Circuit Assembly (Electronic Assembly) Manufacturing, Products & technology - general, Preformed Wire Interconnect Devices

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Etch tool readiness

Article Abstract:

The factors involved in providing an overall economically viable 300 mm toolset cannot be as easily identified and implemented as the understanding of the advantage associated with its area gain. Tool cost, wafer cost, yield verification and tool qualification are some of the factors that IC manufacturers need to consider to assess economic viability and justify costs. The industry is experiencing an unprecedented level of cooperation among manufacturers and suppliers which, along with improved techniques for development, should keep progress in line with an expected ramp to volume production until 2003.

Market information - general

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