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Electronics and electrical industries

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Interconnect deposition

Article Abstract:

The transition to the 300 mm interconnect solutions is critical and should be smooth and low-risk. Several high-level issues must be addressed, including starting wafer cost, equipment throughput, increased chemical usage, space requirements and the use of copper as an interconnect material. The main challenge is the within-wafer film uniformity for HPD- CVD at 300 mm. The optimization of the physical vapor depposition source to obtain equivalent or better within-wafer uniformity is critical. For electrochemical plating, many 200 mm challenges apply at 300 mm. Thus, the solutions for 300 mm need to be flexible, production-prove and robust.

Author: Carey, Paul, Kuppurao, Satheesh
Publisher: Reed Business Information, Inc. (US)
Publication Name: Semiconductor International
Subject: Electronics and electrical industries
ISSN: 0163-3767
Year: 2000
Printed Circuit Assembly (Electronic Assembly) Manufacturing, Preformed Wire Interconnect Devices

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Metrology challenges

Article Abstract:

Several critical metrology challenges that must be overcome until 2005 have been identified at the 1999 International Technology Roadmap for Semiconductors. Improved optical and electrical process control metrology for ultrathin gate dielectrics and better dimensional control for high- aspect-ratio device structures were among the advances required. Also found essential were the ability to measure multilayer opaque and transparent film stacks, detect changes in atomically thin interfacial layers and control ultrashallow implants.

Author: Collins, George J.
Publisher: Reed Business Information, Inc. (US)
Publication Name: Semiconductor International
Subject: Electronics and electrical industries
ISSN: 0163-3767
Year: 2000
Instrument Manufacturing for Measuring and Testing Electricity and Electrical Signals, Waveform Measuring Eqp

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Ion implantation challenges

Article Abstract:

No fundamental process-level inventions are required for ion implant technology aside from the 300 mm scale-up requirement. To ensure coverage of future technology nodes, implanters will have to prove long-term technical extendibility. The requirement for full fab automation is one primary difference with the 300 mm transitiion. It remains the single greatest risk to smooth transition from pilot to production for 300 mm.

Author: Kawski, Jim
Publisher: Reed Business Information, Inc. (US)
Publication Name: Semiconductor International
Subject: Electronics and electrical industries
ISSN: 0163-3767
Year: 2000
Ion Implantation, Metal Coating, Engraving (except Jewelry and Silverware), and Allied Services to Manufacturers

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