Sumitomo, EMCORE sign agreement

Article Abstract:

Sumitomo Electric Industries Ltd of Hyogo, Japan, and Somerset, NJ-based EMCORE Corp has reached a long-term agreement for a joint development and fabrication of indium gallium phosphide epitaxial wafers. The materials will be employed as heterojunction bipolar transistor (HBT) wafers intended for digital wireless and cellular applications. EMCORE's Epitaxial Materials foundry in Somerset is chosen to manufacture the HBT devices because it is capable to produce the materials in commercial quantities.

Japan, Strategic alliances, Sumitomo Electric Industries Ltd.

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Lessons learned from certifying a SMIF fab

Article Abstract:

A design for standard mechanical interface fab (SMIF) containing numerous minienvironment solutions including 39 designs from 25 suppliers is described. A first-pass tool failure rate of almost 25% was determined using a certification procedure. The failures were attributed mostly to filter leaks and pressurization problems. The types of problems encountered and time to certification were examined. Techniques for testing vendor-supplied SMIF solutions are discussed.

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GaAs ICs: the future has arrived

Article Abstract:

Advanced gallium arsenide (GaAs) ICs, manufactured through the H-GaAs process, achieve speed of 2.5 Gb/s and 10 Gb/s to meet the increasing demand for added bandwidth. The H-GaAs process allowed manufacturers to produce GaAs ICs cost-efficiently and with less complex processing. The process also enabled competitive pricing of VLSI devices with numerous transistors, embedded memory, transducers and detectors.

Integrated & Hybrid Circuits

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