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Applications of VLSI circuits to medical imaging

Article Abstract:

Advanced very-large-scale integration (VLSI) technology is finding widespread application in medical imaging, as is exemplified by the use of general-purpose digital signal processing (DSP) ICs, custom VLSI ICs, and microprocessors in 3D image displays and ultrasound. GE's Graphicon display processing system demonstrates the great improvements that VLSI technology makes in 3D display technology. Graphicon, which contains 26 VLSI chips of 11 design types including two custom ones, can display 3D images at the rate of 10,000 triangles per second. Ultrasound processing will probably be affected by VLSI technology more than any other medical imaging process, as VLSI is is utilized to implement fully digital front-ends to real-time ultrasound phased array signal processors. The advent of silicon compiler CAD tools will also enable the rapid design of custom VLSI image processing ICs.

Author: O'Donnell, Matthew
Publisher: Institute of Electrical and Electronics Engineers, Inc.
Publication Name: Proceedings of the IEEE
Subject: Electronics
ISSN: 0018-9219
Year: 1988
Noncommercial research organizations, Integrated circuits, Design and construction, Medical research, Ultrasonics, Three dimensional graphics, Applications, Three-Dimensional Graphics, Impact Analysis, General Electric Graphicon 700 (Computer apparatus)

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Evolution of the MOS transistor - from conception to VLSI

Article Abstract:

This overview of the historical development of, current technologies based on, and development trends in metal-oxide-semiconductor field-effect-transistor (MOSFET) begins with the 1928 Julius Lilienfeld patent disclosures relating to field-effect conductivity modulation. Three phases in the development of MOS devices are identified and described: a "discovery" phase through 1957, technology development and device innovation phase extending from 1959 to 1968, and a MOS integration and integrated circuit manufacturing era extending from 1968 to the current time. Major recent developments in MOS technology are described, including VLSI CMOS and BiCMOS devices, ferroelectric DRAMs, and three-dimensional architectures. Silicon MOS is compared to silicon BJT and to gallium-arsenide technologies. Requirements for future development are described.

Author: Sah, Chih-Tang
Publisher: Institute of Electrical and Electronics Engineers, Inc.
Publication Name: Proceedings of the IEEE
Subject: Electronics
ISSN: 0018-9219
Year: 1988
Integrated circuit fabrication, History, MOS Integrated Circuits, technical

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Subjects list: Circuit design, Industrial research, Very large scale integration, Research and Development, Trends, Very-Large-Scale Integration
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