The electrical properties and device applications of homoepitaxial and polycrystalline diamond films
Article Abstract:
Diamond provides a unique combination of desirable properties for use as a semiconductor material for various electronic applications. Diamond's wide energy gap provides its high breakdown fields, which combine with its surface stability at high temperatures to make it ideal for high-temperature device applications. The current state of chemical vapor deposition (CVD) thin-film diamond as a material for high-temperature or high-performance electronic applications is reviewed, focusing on single crystal and polycrystalline films. Not addressed are so-called 'amorphous diamond' layers and diamond-like materials. Diamond film doping and electrical properties, the effects of surface treatment on the electrical properties of the diamond surface, the formation of Ohmic contacts, measurements of space-charge-limited currents in thin-film diamond and rectifying metal contacts to homoepitaxial diamond films are discussed.
Publication Name: Proceedings of the IEEE
Subject: Electronics
ISSN: 0018-9219
Year: 1991
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Medical imaging systems for feedback control of interstitial laser photocoagulation
Article Abstract:
Interstitial laser photocoagulation is a slightly invasive technique in which near-infrared laser energy is directed at a solid tumor through one or more fiber optics implanted interstitially. ILP couples the advantages of controlled, localized destruction with those of minimal invasiveness. The target cells are destroyed by heating them to protein denaturation thresholds of about 60 degrees. ILP conducted using about 2.0 watts of continuous-wave Nd:YAG laser energy at 1,064 nanometers (nm) has been successful at destroying solid tumor tissue in the breast, liver, pancreas, brain, head and neck. Magnetic resonance (MR) imaging of the brain and abdominal ultrasound imaging produce high-contrast images of ILP lesions. These images provide feedback data that can be used to dynamically control the shape of the ILP lesion.
Publication Name: Proceedings of the IEEE
Subject: Electronics
ISSN: 0018-9219
Year: 1992
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