Thin film deposition and microelectronic and optoelectronic device fabrication and characterization in monocrystalline alpha and beta silicon carbide

Article Abstract:

Silicon carbide (SiC) and other close-packed structures have a special one-dimensional type polymorphism called polytypism. Polytypes are the same in the two dimensions of the close-packed planes but different in the stacking sequence in the dimension perpendicular to these planes. The stacking sequence of the close-packed planes of covalently bonded primary coordination tetrahedra in SiC can be described by the ABC notation. Also occurring in SiC is the hexagonal (ABAB) sequence, and both can occur in more complex, intermixed forms yielding a wider range of ordered, larger period, stacked hexagonal, or rhombohedral structures. Recent advances in research and development on SiC operative devices under extreme conditions are reviewed in the areas of crystal growth, device fabrication and characterization. Results from the Soviet Union that have not previously been reviewed are included.

Integrated circuits, Circuit design, Microelectronics

---

III-V nitrides for electronic and optoelectronic applications

Article Abstract:

Interest in thin films of the wider bandgap semiconductor III-V mononitrides, particularly GaN, increased in the 1980s with the commercial development of light-emitting diodes and semiconductor lasers. Optoelectronic devices with bandgaps engineered specifically with energies from the visible to the deep UV region are theoretically possible using these materials. Cubic BN (cBN) films are used primarily for wear and corrosion resistant, electrically insulating and passivating surfaces that can be used in high temperature and/or corrosive environments. CBN is also used in steel machining where diamond tools cause problems resulting from the transfer of carbon into the metal following transformation to graphite at the hot interface. Recent developments in all the III-V nitride thin film materials in terms of electronic and optoelectronic applications are reviewed.

Thin films

---

Large bandgap electronic materials and components

Article Abstract:

The thermal, mechanical, chemical and electronic properties of diamond, silicon carbide and cubic boron nitride give the materials potential for use in high-power, high-temperature, high-frequency and optical microelectronic devices resistant to radiation damage. Previous research has shown that the electrical conductivity in power field-effect-transistors fabricated in large bandgap materials can be improved, using such physical parameters as peak electric field strength at avalanche breakdown, by two or three orders of magnitude relative to comparable silicon devices. It has also been shown that a considerable improvement is possible in the on-state resistance of the devices. Recent discoveries of several low temperature/low pressure process routes for the deposition of films and coatings of diamond have made it an important research topic in recent years.

High technology, Radiation (Physics), Product introduction, New Technique, Radiation

Similar abstracts:

• Abstracts: The evolution of electrical and electronics engineering and the Proceedings of the IRE: 1913-1937. The Faraday Bicentennial
• Abstracts: ATC ground communications system optimization techniques. Development and operation of the traffic alert and collision avoidance system
• Abstracts: Future ATC automation aids based upon AI technology. Advanced automation system design
• Abstracts: ATC ground communications system optimization techniques. Applicability of an augmented GPS for navigation in the National Airspace System
• Abstracts: Microelectronics work in the ESPRIT program. Cooperative research on application-specific microelectronics. Collaborative semiconductor research in Japan

This website is not affiliated with document authors or copyright owners. This page is provided for informational purposes only. Unintentional errors are possible.