Integrated Circuits: The Case for Gallium Arsenide

Article Abstract:

Gallium arsenide achieves high speeds in electronic devices and circuits with electron velocities about five times that achieved in silicon devices. Researchers have done work with depletion-mode metal-semiconductor field-effect transistor (D-MESFET), the enhancement-mode MESFET (E-MESFET), and the high-electron-mobility transistor (HEMT). Planar-implanted D-MESFETs are fabricated by implantation of dopant ions into the semi-insulating GaAs substrate. While the E-MESFETs have advantages to D-MESFETs, there are problems with developing process technology for them. Molecular-beam epitaxy (MBE) is used for fabrication of heterojunction GaAs devices with improved performance over standard MESFETs. Highest performance and costliest fabrication is found in heterojunction bipolar transistors. Work must continue before GaAs integrated circuits can be manufactured on a large scale. The markets for GaAs circuits are evolving. Graphs and diagrams illustrate GaAs performance and fabrication features.

Semiconductor devices, Integrated circuits, Electronic components, Microelectronics, Future Technologies, Semiconductor Device

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Gallium arsenide finds a new niche

Article Abstract:

Very-large-scale integration (VLSI) gallium-arsenide (GaAs) integrated circuits (ICs) offer significant advantages in implementing high-speed components or critical paths in computers or telecommunications devices at room temperature. The development of a method of manufacturing GaAs ICs that uses refractory metal to replace gold in the self-aligned gates of the MES-FET architecture simplifies and reduces the cost of manufacturing (only 11 mask steps are required) while increasing yield. The new technology also reduces power consumption at a slight trade-off in speed. GaAs ICs ICs with over 50,000 transistors are now produced in volume, largely as VLSI application-specific integrated circuits. Direct-coupled FET logic is used for VLSI devices, while medium-to-large-scale devices are implemented in source-coupled FET. GaAs IC products and applications are discussed.

Semiconductors and related devices, Performance improvement (Computers), Performance Improvement, State-of-the-Art, Very-Large-Scale Integration

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Gallium arsenide: joins the giants

Article Abstract:

Gallium arsenide (GaAs), which was previously used in solid state lasers and radio frequency amplifiers, is now being used in high speed integrated circuits and very large-scale integration. GaAs is inexpensive to manufacture and exhibits swift switching between logic gates. GaAs also exerts a very low level of delay in a device, thereby enhancing the speed of functioning. Conventional silicon switches exhibit a greater delay, thereby reducing the functioning speed of a device.

Research, Analysis, Gallium arsenide semiconductor devices, Very-large-scale integration, Gallium arsenide semiconductors

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