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Engineering and manufacturing industries

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Power semiconductors: fast, tough and compact

Article Abstract:

MOS field-effect transistors and gate turnoff thyristors are setting new standards for switching frequencies and current voltage ratings. Power semiconductors are being used in a variety of applications such as switching and uninterruptible power supplies, electronic ballasts for fluorescent lights, induction heating and welding, automotive power systems, appliances, and drives for motors. Examples of these devices are the high-power bipolar-junction transistor, the power MOS field-effect transistor, the gate turnoff thyristor, and the insulated-gate bipolar transistor.

Author: Chen, Dan Y.
Publisher: Institute of Electrical and Electronics Engineers, Inc.
Publication Name: IEEE Spectrum
Subject: Engineering and manufacturing industries
ISSN: 0018-9235
Year: 1987
Semiconductors and related devices, Integrated circuits

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Growing 'Cool' Semiconductors

Article Abstract:

Researchers at the Massachusetts Institute of Technology have demonstrated a technique called plasma-enhanced chemical-vapor deposition (PECVD) to improve VLSI fabrication techniques. The new process allows layers of silicon to be grown at much lower temperatures than now used, increasing the numbers of transistors that will fit on a chip. Very high-quality crystalline-silicon films on two-inch silicon wafers have been produced at temperatures as low as 650 degrees centigrade.

Publisher: Institute of Electrical and Electronics Engineers, Inc.
Publication Name: IEEE Spectrum
Subject: Engineering and manufacturing industries
ISSN: 0018-9235
Year: 1984
Technology, Silicon Chips

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A New Class of Semiconductors

Article Abstract:

Strained-layer superlattices (SLS), a new material for semiconductors, have been developed at Sandia National Laboratories. The material should allow design of electron devices with faster switching speeds, more efficient production of light, and better adaptation to a wider range of operating conditions. The use of materials of different atomic spacing in the layering will allow the growth of semiconductors with a broad range of properties.

Publisher: Institute of Electrical and Electronics Engineers, Inc.
Publication Name: IEEE Spectrum
Subject: Engineering and manufacturing industries
ISSN: 0018-9235
Year: 1984
Product introduction, New Technique

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Subjects list: Semiconductor devices, Electronic components, Semiconductor Device, Integrated circuit fabrication, Crystals, Semiconductor Preparation
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