Wireless communication chips span the semiconductor gamut

Article Abstract:

Gallium-arsenide (GaAs) metal-semiconductor field-effect transistors (MESFETs), the RF monolithic-microwave-IC (MMIC) application that has become dominant in recent times due to its superior performance in wireless communication systems, are being challenge by newly emerging and rediscovered technologies. Metal-oxide-semiconductor-FET (MOSFET), including a new process called silicon germanium (SiGe), is being developed as a less-expensive alternative. Another process under renewed consideration is silicon-on-insulator (SOS), a technique developed in the 1970s.

Comment:

GaAs MESFETs are being challenge by newly emerging and rediscovered technologies

Gallium Arsenide Semiconductors, Gallium arsenide semiconductor devices

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Low-noise amp fronts for high-speed ADC

Article Abstract:

Burr-Brown Corp's OPA687 operational amplifier can be used to match the analog-to-digital converter's (ADC) wide bandwidth needs when digitizing wireless base-station intermediate-frequency (IF) signals. The operational amplifier's very-low internal noise and high-gain bandwidth provides high-gain signal conditioning for an ADS852 ADC used to convert IF signals in a wireless base-station application. The OPA687 is available in either an 8-lead SO-8 surface-mount package or a 6-lead SOT23 package.

Radio and Television Broadcasting and Wireless Communications Equipment Manufacturing, Satellite Low-Noise Amplifiers, Satellite communications systems, Microwave amplifiers

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GaAs, MOS, bipolar vie for power applications

Article Abstract:

Bipolar, metal-oxide semiconductor (MOS) and GaAs semiconductor processes are competing for a share of the expanding power-amplifier applications of semiconductors in the communications sector. The three major semiconductor processes each offer a combination of problems and benefits. Receivers and transmitters, which are used in a wide range of equipment such as orbiting satellites, base stations and wireless telephones, have very different semiconductor-device requirements.

Comment:

Bipolar, metal-oxide semiconductor & GaAs compete for shr of power-amplifier applications of semiconductors in commun sector

MOS Field-Effect Transistors, Gallium Arsenide FETs, Bipolar Transistors, MOSFET (Transistors), Gallium arsenide field effect transistors

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