Assembly of submicrometre ferromagnets in gallium arsenide semiconductors

Article Abstract:

The incorporation of submicrometre ferromagnetic structures into a semiconductor such as III-V gallium arsenide forms thin layers of two-dimensional magnetic films. The method described involves implantation of the semiconductor with manganese ions followed by annealing to create a phase separation, after which submicroscopic crystals of GaMn nucleate and develop from the implanted layer. The production of ferromagnetic particles introduces a new material with spin-dependent magnetoelectronic properties.

Observations, Ferromagnetism, Gallium arsenide semiconductor devices, Gallium arsenide semiconductors, Magneto-optical devices

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Magnets without metals

Article Abstract:

The reported discovery of a new molecular organic magnet raises hopes that more of such materials could be found. These magnets have a critical temperature of 1.48 degrees Kelvin, are non-conducting and are transparent to visible light. The new magnet is composed of nitroxyl groups containing unpaired electrons. These unpaired electrons spin ferromagnetically and the molecules are packed such that a magnetic moment is present in the entire lattice.

Materials, Magnets

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Teaching magnets new tricks

Article Abstract:

An external electric field has been used to control magnetism in semiconductors.

Semiconductors

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