Electric-field control of ferromagnetism

Article Abstract:

Electric-field control of ferromagnetism is examined.

Electric fields

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Current-induced domain-wall switching in a ferromagnetic semionductor structure

Article Abstract:

The ability of reversing magnetization through domain wall-switching that can be induced by current pulses with densities below 10 raised to 5 Acm raised to -2, is described. This could be possible only if the problems of low ferromagnetic transition temperature are dealt with.

Analysis, Domain structure, Magnetization

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Electrical spin injection in a ferromagnetic semiconductor heterostructure

Article Abstract:

It has been possible to use epitaxially grown all-semiconductor ferromagnetic/non-magnetic structures to show electrical spin injection and transport. This research involved making all-semiconductor, light-emitting spintronic devices using III-V heterostructures based on gallium arsenide. Electroluminescence polarization indicates that the hole spin polarization in a ferromagnetic semiconductor can be transported across interfaces over distances of more than 200 nm.

Light-emitting diodes, LEDs

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