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Metal-support interactions in Cu/SiO2 model catalysts

Article Abstract:

A study was conducted to analyze the thermal stability of wet-chemically prepared Cu/SiO2 model catalysts supporting nanometer-sized copper particles on silica framework supports. Si(100) wafers were utilized to support the deposited particles. High surface area supports were then used to prevent the sintering of particles. Results indicated that heating in ultrahigh vacuum promoted the interdiffusion of copper through the SiO2 layer into the silicon substrate for thin SIO2 supports and in copper silicide formation for thick SiO2 supports.

Catalysts, Particles, Particulate matter, Copper, Silicides

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CdS nanocrystals entrapped in thin SiO2 films

Article Abstract:

The effect of subsequent annealing on the entrapping of CdS nanocrystals by thin SiO2 films was examined by implanting Cd+ and S+ ions into a planar 100 nm thin SiO2 film structure. Results showed that the formation of CdS crystallite is due to the oxidation of the preformed Cd nanoparticles by energetic S+ ions. The subsequent annealing was found to induce reaction toward CdS and led to the loss of Cd and S from the film and the coarsening of the CdS particles.

Thin films, Cadmium, Ionic crystals, Silicon oxide films

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Equilibrium shape diagram for strained Ge nanocrystals on Si(001)

Article Abstract:

A study was conducted to characterize a chemical-thermodynamic model supporting the formation and annealing characteristics of germanium nanocrystalline islands prepared on Si(001). Germanium anomalies on the Si(001) system were resolved using an equilibrium shape diagram based on free energy differences among island shapes. Results indicated that domes on Si(001) are adventitious structures that support more atoms per unit substrate surface area than pyramids.

Nanotechnology, Semiconductors, Germanium

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