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Electronics and electrical industries

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Small area effect hinders TiSi2 transformation

Article Abstract:

The transformation of titanium silicide from the C49 phase to the C54 phase during annealing can be distinctly affected at very small linewidths which leaves a percentage of small area lines entirely in the C49 phase. Researchers have discovered that there is a 60% probability that a 0.5 micron wide, 3- microns line will remain entirely in the C49 phase after standard processing. It is necessary, therefore, to employ a thicker Ti layer that offers a greater volume available for possible nucleation to avoid small area effects.

Author: Singer, Peter (Judge)
Publisher: Reed Business Information, Inc. (US)
Publication Name: Semiconductor International
Subject: Electronics and electrical industries
ISSN: 0163-3767
Year: 2000
Products & technology - general

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Analyze SiGe with AES and SRP

Article Abstract:

Research conducted at the Arizona State University and Lawrence Semiconductor Research Labs revealed that it is possible to determine the thickness, composition and doping concentrations in the various layers of heterostructures using only spreading resistance profile and auger electron spectroscopy measurements. Measurements of depth profiles and virtual substrate were also made in a straightforward manner.

Author: Singer, Peter (Judge)
Publisher: Reed Business Information, Inc. (US)
Publication Name: Semiconductor International
Subject: Electronics and electrical industries
ISSN: 0163-3767
Year: 2000
Science & research, Semiconductor Devices

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Hitachi enters into joint 300 mm research programs with International SEMATECH

Article Abstract:

International SEMATECH of Austin, TX, and Tokyo, Japan-based Hitachi Ltd reported a joint program designed to accelerate the latter's 300mm wafer technologies, develop 100nm and 300nm test material for member firms and help other equipment suppliers in the development of sophisticated tools. The joint program will involve the WI-1100 Automatic Wafer Inspection System that can detect deficiencies on patterned silicon wafers.

Author: Singer, Peter (Judge)
Publisher: Reed Business Information, Inc. (US)
Publication Name: Semiconductor International
Subject: Electronics and electrical industries
ISSN: 0163-3767
Year: 1999
Japan, Strategic alliances, International SEMATECH

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Subjects list: United States, Semiconductor wafers
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