Evolution of MOS-bipolar semiconductor technology
Article Abstract:
The power transistor market is expected to grow from the current $1 billion to $5 billion in 1995, with MOS transistors' share growing from 10 percent to 80 percent as a consequence of the technology's very high input impedance, low input power levels, and ability to function as low-cost power control devices. There are two types of MOS power control devices: power MOSFETs and power MOS-bipolar ICs. Power MOS field effect transistors (MOSFETs) are generally implemented in vertical double diffused MOS (DMOS) and are capable of breakdown voltages to 1000V at 1A and current levels to over 20A at under 100V. Power MOS-bipolar ICs provide high input impedance and low on-resistance, as exemplified by the insulated-gate transistor. Technological details and trends in power MOS devices are briefly described.
Publication Name: Proceedings of the IEEE
Subject: Electronics
ISSN: 0018-9219
Year: 1988
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GTO thyristors
Article Abstract:
Gate turn-off (GTO) thyristors have become important high power control devices for such applications as large inverters, choppers, and variable-frequency ac motor drives. GTO thyristors currently offer power ratings to 5000V, 3000A, and have become the dominant device for applications with ratings from hundreds of kilowatts to 10,000kW. MOS controlled transistors and thyristors dominate power applications below a few hundred kilowatts. Phosphorous deposit annealing and electro-beam irradiation technologies have played a large part in developing reliable GTO thyristors. The theory of GTO thyristor functioning and architecture are extensively described. Advanced GTO thyristor technologies, including heterojunction GTO thyristors, are briefly described.
Publication Name: Proceedings of the IEEE
Subject: Electronics
ISSN: 0018-9219
Year: 1988
User Contributions:
Comment about this article or add new information about this topic:
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