Status of device-qualified GaAs substrate technology for GaAs integrated circuits
Article Abstract:
The current status of gallium-arsenide crystal growth and substrate production and doping is reviewed. High-pressure liquid-encapsulated Czochralski (HP-LEC) growth is the preferred technique for growing large-scale GaAs, semi-insulating crystals up to 3-in. in diameter. The compositional purity of such GaAs wafers is much less than silicon counterparts, resulting in far lower yield in GaAs IC production. Other current factors in the production of GaAs wafer--such as stoichiometry control, crystalline perfection, wafer surface quality, and wafer uniformity--are reviewed. Current problems in producing high-quality GaAs crystals and ICs are frustrating the use of cost-effective, high-yield ion-implantation for GaAs IC production. Techniques being developed for production of high-quality GaAs substrates are expected to improve performance and yields of GaAs ICs.
Publication Name: Proceedings of the IEEE
Subject: Electronics
ISSN: 0018-9219
Year: 1988
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The development of the first LSI GaAs integrated circuits and the path to the commercial market
Article Abstract:
This overview of the development and applications of large scale integration (LSI) and very LSI (VLSI) gallium arsenide devices also reviews the use of GaAs LSIs and VLSIs for both research and development and commercial applications. A driving force in GaAs circuit R&D is the Department of Defense's Defense Advanced Research Projects Agency. A variety of GaAs circuits and devices are briefly described. Major participants in the commercialization of GaAs devices include Rockwell and GigaBit Logic. GigaBit Logic has built a plant capable of producing 100 GaAs wafers per week, with gate-equivalent complexity reaching the 2000 gate range, and GaAs device performance ranging up to 1.275GHz.
Publication Name: Proceedings of the IEEE
Subject: Electronics
ISSN: 0018-9219
Year: 1988
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