Re-engineering silicon: Si-Ge heterojunction bipolar technology
Article Abstract:
Devices made by doping the silicon transistor with germanium combine the low cost and high strength of silicon with the high speeds and cut-off frequencies of III-V compound semiconductors. They are manufactured through ultrahigh vacuum chemical-vapor deposition technique with equipment that is common to advanced silicon fabrication facility. The ICs go into fast converters, photonics and cryogenic electronics.
Publication Name: IEEE Spectrum
Subject: Engineering and manufacturing industries
ISSN: 0018-9235
Year: 1995
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Re-engineering engineering education
Article Abstract:
Engineering schools are working with private industry and government representatives to redesign curricula. In the US emphasis is placed on teaching students to work as a team and to communicate within interdisciplinary groups. The American Society for Engineering Education published guidelines for new education. Canada's Telecommunications Research Institute of Ontario is a model of the new teaching.
Publication Name: IEEE Spectrum
Subject: Engineering and manufacturing industries
ISSN: 0018-9235
Year: 1995
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